v ceo -50 v v cbo -50 v v ebo -5.0 v i c -150 ma total device dissipation fr-5 board (note1) t a = 25 o c junction and storage temperature description data sheet pnp epitaxial planar transistor FMBT1015 ratings maximum ratings collector - emitter voltage collector - base voltage emitter - base voltage collector current (continuous) symbol value units p d 125 mw t j , t stg -55 to 150 o c mechanical dimensions .110 .060 .037 .037 .115 .016 .043 .004 .016 1 2 3 1 2 3 electrical characteristics @ 25 o c characteristic symbol min max unit collector - emitter breakdown voltage (i c = -1.0ma) collector - base breakdown voltage (i c = -0.1ma) emitter - base breakdown voltage (i e = -0.01ma) collector cutoff current (v cb = -50v) emitter cutoff current (v eb = -5.0v) dc current gain (i c = -2.0 ma, v ce = -6.0 v)* (i c = -150 ma, v ce = -6.0 v) collector - emitter saturation voltage (i c = -100 ma, i b = -10 ma) base - emitter saturation voltage (i c = -100 ma, i b = -10 ma) current - gain - bandwidth product (i c = -1.0 ma, v ce = -10 v, f = 100 mhz) output capacitance (v cb = -10 v, f = 1.0 mhz) v br(ceo) -50 --- v v br(cbo) -50 --- v v br(ebo) -5.0 --- v i cbo --- -0.1 m a i ebo --- -0.1 m a h fe --- 120 600 25 --- v ce(sat) vdc --- -0.3 v be(sat) vdc --- -1.1 f t 80 --- mhz c ob --- 7.0 pf * classification of h fe rank a4y a4g a4b range 120-240 200-400 350-600 2 3 1
data sheet FMBT1015 pnp epitaxial planar transistor
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